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Preliminary Technical Information
TrenchMV TM Power
MOSFET HiperFET TM
N-Channel Enhancement Mode
Avalanche Rated
IXFA130N10T
IXFP130N10T
V DSS =
I D25 =
R DS(on) ≤
TO-263 (IXFA)
100V
130A
9.1m Ω
Fast intrisic diode
Symbol
V DSS
Test Conditions
T J = 25 ° C to 175 ° C
Maximum Ratings
100
V
G
S
(TAB)
V GSM
I D25
I LRMS
I DM
Transient
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
± 30
130
75
350
V
A
A
A
TO-220 (IXFP)
I A
E AS
T C = 25 ° C
T C = 25 ° C
65
750
A
mJ
G
D
S
(TAB)
P D
T J
T JM
T stg
T C = 25 ° C
360
-55 ... +175
175
-55 ... +175
W
° C
° C
° C
G = Gate
S = Source
Features
D = Drain
TAB = Drain
T L
T SOLD
M d
Weight
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
300
260
1.13 / 10
3.0
2.5
° C
° C
Nm/lb.in.
g
g
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Fast intrinsic diode
Advantages
Easy to mount
Space savings
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
High power density
Applications
BV DSS
V GS = 0V, I D = 250 μ A
100
V
Automotive
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 1mA
V GS = ± 20V, V DS = 0V
V DS = V DSS
V GS = 0V
T J = 150 ° C
2.5
4.5
± 200
10
500
V
nA
μ A
μ A
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
R DS(on)
V GS = 10V, I D = 25A, Notes 1, 2
9.1
m Ω
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
? 2008 IXYS CORPORATION, All rights reserved
DS100020(07/08)
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